ResearchBenchmarksDC Characterization on Single-fin GaN FinFET DC @ VGS=5V, VDS=12VDC Characterization on Single-fin GaN FinFET DC @ VGS=5V, VDS=12VFollow28,636IDSmax (mA/mm)Device D23,379.69,936.5516,493.523,050.45May 31, 2026Evaluation resultsMethodMethodLinksIDSmax (mA/mm)IDSmax (mA)gmmax (mS/mm)gmmax (mS)On-Resistance (Ω)Threshold Voltage (V)Device D2Weff (nm)=940.1Weff (nm)=940.12026.0528,63626.917,2876.8437.530.448Device D1Weff (nm)=1,555Weff (nm)=1,5552026.0511,01317.13,5145.4686.80.491BaselineWeff (nm)=580Weff (nm)=5802026.054,3512.523,1021.79704.20.432