ResearchBenchmarksAC Characterization on Single-fin GaN FinFET @ VGS=5V, VDS=6VAC Characterization on Single-fin GaN FinFET @ VGS=5V, VDS=6VFollow2.05Input Capacitance (fF)Baseline1.95682.58593.2153.8441May 31, 2026Evaluation resultsMethodMethodLinksInput Capacitance (fF)Output Capacitance (fF)Total Gate Charge (fC)Gate-to-Drain Charge (fC)Figure of Merit (pΩ·C)BaselineWeff (nm)=580Weff (nm)=5802026.052.0515.0410.2590.24141.53Device D2Weff (nm)=940.1Weff (nm)=940.12026.054.0525.7120.25154.2613.09Device D1Weff (nm)=1,555Weff (nm)=1,5552026.054.3824.6821.9148.0829.5