Tailoring of charge carriers with deposition temperature in pulsed laser deposited BiFeO3 thin films
About
This research investigates the structural, topological, electrical and optical properties of pulsed laser deposited polycrystalline BiFeO3 thin films on silicon and glass substrate at varying deposition temperatures ranging from 400 degC to 700 degC. X-ray diffraction confirm rhombohedral phase and X-ray photoelectron spectroscopy reveals stoichiometric BiFeO3 films. The optical bandgap of thin films obtained from absorption spectra increases with the substrate temperature. Photoluminescence emission spectrum reveals the defects and Atomic Force Microscopy analysis bring out the surface topography and crystallinity improvement with temperature. The charge transport studies reveal a transition in conductivity from n-type at lower deposition temperature to p-type at higher deposition temperature, attributed to oxygen and bismuth vacancies respectively. The intricate understanding of conductivity tuning and the leaky nature of BiFeO3 thin film opens avenues for applications in nonvolatile memories, particularly neuromorphic devices.
Related benchmarks
No related benchmarks have been indexed for this paper yet.