Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics

We propose a simple and versatile model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetics theory found in metal recrystallization and amorphous semiconductor crystallization. We analyze the kinetics of the transformation and the grain size distribution of the product material, finding a good overall agreement between our model and available experimental data. The information so obtained could help to relate the mentioned experimental deviations due to preexisting anisotropy along some regions, to certain degree of crystallinity of the amorphous phases during deposition, or more generally to impurities or roughness of the substrate.

Mario Castro, Francisco Dominguez-Adame, Angel Sanchez, Tomas Rodriguez(d) __INSTITUTION_4__ GISC, Departamento de Fisica de Materiales, Universidad Complutense, Madrid, Spain (b) Universidad Pontificia de Comillas, Madrid, Spain (c) GISC, Departamento de Matematicas, Universidad Carlos III de Madrid, Madrid, Spain (d) Departamento de Tecnologia Electronica, E.T.S.I. Telecomunicacion, Universidad Politecnica, Madrid, Spain) · 1999