Computing-In-Memory Hardware Performance Evaluation on Hardware Performance Characterization
0.35Latency (ns)VDAT’25
Evaluation Results
| Method | Links | |||
|---|---|---|---|---|
| VDAT’25Technology (nm)=65, Supply Voltage (V)=0.7, NVM Device=ReRAM, Operation=XNOR, Bit-cell Type=3T1R, Non-Volatility=Yes, Operation Mode=Digital, Precision=1-4b2026.05 | 0.35 | 2.86 | — | |
| E-ReCONTechnology (nm)=65, Supply Voltage (V)=1.2, NVM Device=ReRAM, Operation=AND, Bit-cell Area (µm²)=0.85, Bit-cell Type=3T1R, Non-Volatility=Yes, Operation Mode=Digital, Precision=1-8b2026.05 | 0.48 | 2.31 | 314 | |
| OJSCAS’21Technology (nm)=40, Supply Voltage (V)=0.9, NVM Device=ReRAM, Operation=CAM, Bit-cell Area (µm²)=0.55, Bit-cell Type=4T2R, Non-Volatility=Yes, Operation Mode=Digital2026.05 | 0.92 | 1.08 | 223.6 | |
| TCAS-I’25Technology (nm)=65, Supply Voltage (V)=1.0, NVM Device=SRAM, Operation=AND, Bit-cell Area (µm²)=2.34, Bit-cell Type=8T, Non-Volatility=No, Operation Mode=Digital, Precision=1-8b2026.05 | 2.5 | 0.4 | 249.1 | |
| ISCAS’24Technology (nm)=28, Supply Voltage (V)=0.8–1.1, NVM Device=ReRAM, Operation=MUL, Bit-cell Type=1T1R, Non-Volatility=Yes, Operation Mode=Hybrid2026.05 | 2.8 | 0.36 | 5.82 | |
| ISQED’25Technology (nm)=65, Supply Voltage (V)=1.2, NVM Device=SRAM, Operation=AND, Bit-cell Area (µm²)=4.1, Bit-cell Type=8T, Non-Volatility=No, Operation Mode=Digital, Precision=1-8b2026.05 | 4 | 2.2 | 480 | |
| TCAS-I’22Technology (nm)=65, Supply Voltage (V)=0.8-1, NVM Device=ReRAM, Operation=AND, Bit-cell Area (µm²)=0.847, Bit-cell Type=1T1R, Non-Volatility=Yes, Operation Mode=Digital, Precision=1-8/1-162026.05 | 6 | — | 114.4 | |
| TCAS-II’23Technology (nm)=180, Supply Voltage (V)=0.5–0.8, NVM Device=ReRAM, Operation=MUL, Bit-cell Type=3T2R, Non-Volatility=Yes, Operation Mode=Digital, Precision=1b2026.05 | 8 | 0.13 | 289 | |
| TCAS-II’24Technology (nm)=40, Supply Voltage (V)=0.3, NVM Device=ReRAM, Operation=MUL, Bit-cell Area (µm²)=0.085, Bit-cell Type=1T1R, Non-Volatility=Yes2026.05 | 9.8 | 0.12 | — | |
| TCAS-II’21Technology (nm)=180, Supply Voltage (V)=0.6–1.2, NVM Device=ReRAM, Operation=MUL, Bit-cell Type=2T2R CSL, Non-Volatility=Yes, Operation Mode=Analog, Precision=3b2026.05 | 16 | 0.06 | — |