# Kinetically Controlled Condensation Boundary Governing Indium Incorporation in InGaN Metal Organic Vapor Phase Epitaxy Source: [Kinetically Controlled Condensation Boundary Governing Indium Incorporation in InGaN Metal Organic Vapor Phase Epitaxy]() Collection index: [llms.txt]() Data updated: 2026-07-01T05:00:12.177Z Authors: Qihui Lin, Junlin Wu, Erqi Xu, Jiaqing Yue, Jiale Wang, Zihao Xu, Haixin Qi, Liyi Luo, Haitao Wang, Jia Wang, Hiroshi Amano, Bo Shen, Guangxu Ju Published: 2026-06-28T02:58:03.000Z ## Abstract We combine in situ synchrotron X-ray crystal truncation rod measurements with a binary Burton-Cabrera-Frank model to quantify indium incorporation during InGaN growth by metal-organic vapor phase epitaxy (MOVPE) on GaN(0001). By distinguishing In adatoms from condensed droplets and incorporating coupled Ga-In incorporation kinetics, the model captures the intrinsically nonlinear dependence of indium composition on precursor flux and growth temperature. The critical In coverage corresponding to the maximum attainable In composition at a given temperature is determined by a kinetic balance between In adatom supply and incorporation capacity, defining a kinetically controlled condensation boundary that shifts with temperature and Ga flux. The model quantitatively predicts this boundary, in agreement with independent measurements, and provides a predictive framework for optimizing high-In-content InGaN growth while avoiding droplet formation. ## Recorded benchmark results A research result applies to its stated dataset, split, metric and evaluation configuration. Compare like-for-like settings, preserve the metric's unit and direction, and distinguish paper-reported results from independent reproduction. The best result recorded here is not a claim of exhaustive, current global coverage. ## Original sources and implementation [Original paper]() [PDF]()