# In-Memory Resistive RAM Implementation of Binarized Neural Networks for Medical Applications Source: [In-Memory Resistive RAM Implementation of Binarized Neural Networks for Medical Applications]() Collection index: [llms.txt]() Data updated: 2025-10-25T22:23:05.784Z Authors: Bogdan Penkovsky, Marc Bocquet, Tifenn Hirtzlin, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, Damien Querlioz Published: 2020-06-20T15:27:21.000Z ## Abstract The advent of deep learning has considerably accelerated machine learning development. The deployment of deep neural networks at the edge is however limited by their high memory and energy consumption requirements. With new memory technology available, emerging Binarized Neural Networks (BNNs) are promising to reduce the energy impact of the forthcoming machine learning hardware generation, enabling machine learning on the edge devices and avoiding data transfer over the network. In this work, after presenting our implementation employing a hybrid CMOS - hafnium oxide resistive memory technology, we suggest strategies to apply BNNs to biomedical signals such as electrocardiography and electroencephalography, keeping accuracy level and reducing memory requirements. We investigate the memory-accuracy trade-off when binarizing whole network and binarizing solely the classifier part. We also discuss how these results translate to the edge-oriented Mobilenet~V1 neural network on the Imagenet task. The final goal of this research is to enable smart autonomous healthcare devices. ## Recorded benchmark results A research result applies to its stated dataset, split, metric and evaluation configuration. Compare like-for-like settings, preserve the metric's unit and direction, and distinguish paper-reported results from independent reproduction. The best result recorded here is not a claim of exhaustive, current global coverage. ## Original sources and implementation [Original paper]() [PDF]()