# Magnetoresistive RAM for error resilient XNOR-Nets

Source: [Magnetoresistive RAM for error resilient XNOR-Nets](<https://www.sota2.com/research/paper/68fa65c41e209131cea0c58e>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-25T21:35:37.665Z

Authors: Michail Tzoufras, Marcin Gajek, Andrew Walker

Published: 2019-05-24T06:10:48.000Z

## Abstract

We trained three Binarized Convolutional Neural Network architectures (LeNet-4, Network-In-Network, AlexNet) on a variety of datasets (MNIST, CIFAR-10, CIFAR-100, extended SVHN, ImageNet) using error-prone activations and tested them without errors to study the resilience of the training process. With the exception of the AlexNet when trained on the ImageNet dataset, we found that Bit Error Rates of a few percent during training do not degrade the test accuracy. Furthermore, by training the AlexNet on progressively smaller subsets of ImageNet classes, we observed increasing tolerance to activation errors. The ability to operate with high BERs is critical for reducing power consumption in existing hardware and for facilitating emerging memory technologies. We discuss how operating at moderate BER can enable Magnetoresistive RAM with higher endurance, speed and density.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1905.10927>)

[PDF](<https://arxiv.org/pdf/1905.10927.pdf>)