# Reduction of Self-heating effect in LDMOS devices

Source: [Reduction of Self-heating effect in LDMOS devices](<https://www.sota2.com/research/paper/68fa62ba1e209131ce9fae99>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-25T20:25:18.953Z

Authors: T.K.Maiti, C. K. Maiti

Published: 2016-07-21T02:24:59.000Z

## Abstract

Isotopic purification of group IV elements leads to substantial increase in thermal conductivity due to reduced scattering of the phonons. Based on this concept, a simulation study is used to demonstrate the reduction of at least 25 oC in LDMOS average temperature.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1608.07233>)

[PDF](<https://arxiv.org/pdf/1608.07233.pdf>)