# Comparative Study of Lateral and Vertical Beta-Ga2O3 Photoconductive Switches via Intrinsic and Extrinsic Optical Triggering Source: [Comparative Study of Lateral and Vertical Beta-Ga2O3 Photoconductive Switches via Intrinsic and Extrinsic Optical Triggering]() Collection index: [llms.txt]() Data updated: 2026-01-27T05:00:04.746Z Authors: Vikash K. Jangir, Sudip K. Mazumder Published: 2025-08-11T23:26:57.000Z ## Abstract Gallium oxide (Ga2O3), with its ultra-wide bandgap (approximately 4.8 eV) and high breakdown field (approximately 8 MV per cm), is a leading candidate for photoconductive semiconductor switches (PCSSs) in high-power and high-speed pulsed applications. This work, for the first time, presents a systematic experimental comparison of lateral and vertical beta-Ga2O3 PCSS under both intrinsic (245 nm) and extrinsic (280 nm, 300 nm, and 445 nm) optical excitation. Under intrinsic excitation, where carrier generation is confined near the surface due to the shallow absorption depth (approximately between 0.1 and 1 um), the lateral PCSS demonstrated higher photocurrent performance compared to the vertical structure. In contrast, under extrinsic excitation, which enables deeper penetration into the bulk, the vertical PCSS exhibited enhanced switching performance due to a more uniform electric-field distribution across the device volume. These results highlight the critical role of device geometry and carrier generation mechanism in optimizing Ga2O3 PCSS performance and provide valuable guidance for developing efficient and cost-effective high-voltage PCSSs. ## Recorded benchmark results A research result applies to its stated dataset, split, metric and evaluation configuration. Compare like-for-like settings, preserve the metric's unit and direction, and distinguish paper-reported results from independent reproduction. The best result recorded here is not a claim of exhaustive, current global coverage. ## Original sources and implementation [Original paper]() [PDF]()