# Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors Source: [Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors]() Collection index: [llms.txt]() Data updated: 2025-10-25T07:59:43.361Z Authors: Lukas V\\"olkel, Rana Walied Ahmad, Alana Bestaeva, Dennis Braun, Sof\\'ia Cruces, Jimin Lee, Sergej Pasko, Simonas Krotkus, Michael Heuken, Stephan Menzel, Max C. Lemme Published: 2025-01-20T16:35:39.000Z ## Abstract Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influence their behavior. In this work, we investigate the resistive switching behavior of hexagonal boron nitride-based memristors with active nickel electrodes under vacuum conditions. Our cells exhibit repeatable, bipolar, nonvolatile switching under voltage stress after initial forming, with a switching window \> 10${^3}$ under ambient conditions. However, in a vacuum, the forming is suppressed, and hence, no switching is observed. Compact model simulations can reproduce the set kinetics of our cells under ambient conditions and predict highly suppressed resistive switching in a water-deficient environment, supporting the experimental results. Our findings have important implications for the application of h-BN-based memristors with electrochemically active electrodes since semiconductor chips are typically processed under high vacuum conditions and encapsulated to protect them from atmospheric influences. ## Recorded benchmark results A research result applies to its stated dataset, split, metric and evaluation configuration. Compare like-for-like settings, preserve the metric's unit and direction, and distinguish paper-reported results from independent reproduction. The best result recorded here is not a claim of exhaustive, current global coverage. ## Original sources and implementation [Original paper]() [PDF]()