# Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

Source: [Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition](<https://www.sota2.com/research/paper/68fa45421e209131ce917294>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-25T05:12:10.318Z

Authors: Abhijit Biswas, Gustavo A. Alvarez, Tao Li, Joyce Christiansen-Salameh, Eugene Jeong, Anand B. Puthirath, Sathvik Ajay Iyengar, Chenxi Li, Tia Gray, Xiang Zhang, Tymofii S. Pieshkov, Harikishan Kannan, Jacob Elkins, Robert Vajtai, A. Glen Birdwell, Mahesh R. Neupane, Elias J. Garratt, Bradford B. Pate, Tony G. Ivanov, Yuji Zhao, Zhiting Tian, Pulickel M. Ajayan

Published: 2023-05-22T17:58:50.000Z

## Abstract

Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap \>4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film on (100) single crystal diamond by pulsed laser deposition and investigated its structural and magnetic properties, optical refractive index, and thermal conductivity. Structural characterizations confirm the mixed (stable hexagonal and metastable cubic) phase growth. Film shows diamagnetic behavior at room temperature. It displays anisotropic refractive index within the visible-to-near-infrared wavelength range. The room temperature cross-plane thermal conductivity of BN is ~1.53 W/(mK), and the thermal conductance of the BN/diamond interface is ~20 MW/(m2K). Our findings are useful for various device related applications based on UWBG BN/diamond heterostructures.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/2305.13306>)

[PDF](<https://arxiv.org/pdf/2305.13306.pdf>)