# Spatio-temporal dynamics of voltage-induced resistance transition in the double-exchange model Source: [Spatio-temporal dynamics of voltage-induced resistance transition in the double-exchange model]() Collection index: [llms.txt]() Data updated: 2025-10-25T04:30:47.784Z Authors: Gia-Wei Chern Published: 2021-05-24T03:07:15.000Z ## Abstract We present multi-scale dynamical simulations of voltage-induced insulator-to-metal transition in the double exchange model, a canonical example of itinerant magnet and correlated electron systems. By combining nonequilibrium Green's function method with large-scale Landau-Lifshitz-Gilbert dynamics, we show that the transition from an antiferromagnetic insulator to the low-resistance state is initiated by the nucleation of a thin ferromagnetic conducting layer at the anode. The metal-insulator interface separating the two phases is then driven toward the opposite electrode by the voltage stress, giving rise to a growing metallic region. We further show that the initial transformation kinetics is well described by the Kolmogorov-Avrami-Ishibashi model with an effective spatial-dimension that depends on the applied voltage. Implications of our findings for the resistive switching in colossal magnetoresistant materials are also discussed. ## Recorded benchmark results A research result applies to its stated dataset, split, metric and evaluation configuration. Compare like-for-like settings, preserve the metric's unit and direction, and distinguish paper-reported results from independent reproduction. The best result recorded here is not a claim of exhaustive, current global coverage. ## Original sources and implementation [Original paper]() [PDF]()