# Universal map of gas-dependent kinetic selectivity in carbon nanotube growth Source: [Universal map of gas-dependent kinetic selectivity in carbon nanotube growth]() Collection index: [llms.txt]() Data updated: 2025-10-27T04:15:13.252Z Authors: K. Otsuka, R. Ishimaru, A. Kobayashi, T. Inoue, R. Xiang, S. Chiashi, Y. K. Kato, S. Maruyama Published: 2021-11-16T12:23:52.000Z ## Abstract Single-walled carbon nanotubes have been a candidate for outperforming silicon in ultrascaled transistors, but the realization of nanotube-based integrated circuits requires dense arrays of purely semiconducting species. Control over kinetics and thermodynamics in tube-catalyst systems plays a key role for direct growth of such nanotube arrays, and further progress requires the comprehensive understanding of seemingly contradictory reports on the growth kinetics. Here, we propose a universal kinetic model and provide its quantitative verification by ethanol-based isotope labeling experiments. While the removal of carbon from catalysts dominates the growth kinetics under a low supply of precursors, our kinetic model and experiments demonstrate that chirality-dependent growth rates emerge when sufficient amounts of carbon and etching agents are co-supplied. As the model can be extended to create kinetic maps as a function of gas compositions, our findings resolve discrepancies in literature and offer rational strategies for chirality selective growth for practical applications. ## Recorded benchmark results A research result applies to its stated dataset, split, metric and evaluation configuration. Compare like-for-like settings, preserve the metric's unit and direction, and distinguish paper-reported results from independent reproduction. The best result recorded here is not a claim of exhaustive, current global coverage. ## Original sources and implementation [Original paper]() [PDF]()