# Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\\times$1

Source: [Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\\times$1](<https://www.sota2.com/research/paper/68fa41611e209131ce8fa88c>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-25T03:15:58.271Z

Authors: Quinn Campbell, Andrew D. Baczewski, R. E. Butera, Shashank Misra

Published: 2021-08-24T15:46:23.000Z

## Abstract

Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies have recently been extended from donors to acceptors, the extent to which kinetics will impact single-acceptor incorporation has yet to be assessed. We develop and apply an atomistic model for the single-acceptor incorporation rates of several recently demonstrated precursor molecules: diborane (B$\_2$H$\_6$), boron trichloride (BCl$\_3$), and aluminum trichloride in both monomer (AlCl$\_3$) and dimer forms (Al$\_2$Cl$\_6$), to identify the acceptor precursor and dosing conditions most likely to yield deterministic incorporation. While all three precursors can achieve single-acceptor incorporation, we predict that diborane is unlikely to achieve deterministic incorporation, boron trichloride can achieve deterministic incorporation with modest heating (50 $^{\\circ}$C), and aluminum trichloride can achieve deterministic incorporation at room temperature. We conclude that both boron and aluminum trichloride are promising precursors for atomic-precision single-acceptor applications, with the potential to enable the reliable production of large arrays of single-atom quantum devices.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/2108.10805>)

[PDF](<https://arxiv.org/pdf/2108.10805.pdf>)