# The impact of stochastic incorporation on atomic-precision Si:P arrays Source: [The impact of stochastic incorporation on atomic-precision Si:P arrays]() Collection index: [llms.txt]() Data updated: 2025-10-25T03:15:58.271Z Authors: Jeffrey A. Ivie, Quinn Campbell, Justin C. Koepke, Mitchell I. Brickson, Peter A. Schultz, Richard P. Muller, Andrew M. Mounce, Daniel R. Ward, Malcom S. Carroll, Ezra Bussmann, Andrew D. Baczewski, Shashank Misra Published: 2021-05-25T16:53:05.000Z ## Abstract Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\\sim$1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorporate into a single lithographic window is manifestly uncertain. We present experimental results indicating that the likelihood of incorporating into an ideally written three-dimer single-donor window is $63 \\pm 10\\%$ for room-temperature dosing, and corroborate these results with a model for the incorporation kinetics. Nevertheless, further analysis of this model suggests conditions that might raise the incorporation rate to near-deterministic levels. We simulate bias spectroscopy on a chain of comparable dimensions to the array in our yield study, indicating that such an experiment may help confirm the inferred incorporation rate. ## Recorded benchmark results A research result applies to its stated dataset, split, metric and evaluation configuration. Compare like-for-like settings, preserve the metric's unit and direction, and distinguish paper-reported results from independent reproduction. The best result recorded here is not a claim of exhaustive, current global coverage. ## Original sources and implementation [Original paper]() [PDF]()