# The M-center in 4H-SiC is a carbon self-interstitial

Source: [The M-center in 4H-SiC is a carbon self-interstitial](<https://www.sota2.com/research/paper/68fa3f1f1e209131ce8eb0c3>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-25T02:14:31.502Z

Authors: J. Coutinho, J. D. Gouveia, T. Makino, T. Ohshima, \\v{Z}. Pastuovi\\'c, L. Bakra\\v{c}, T. Brodar, I. Capan

Published: 2021-05-10T09:07:36.000Z

## Abstract

The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M-center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels, match those of the carbon self-interstitial.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/2105.04209>)

[PDF](<https://arxiv.org/pdf/2105.04209.pdf>)