# Wafer-scale, epitaxial growth of single layer hexagonal boron nitride on Pt(111)

Source: [Wafer-scale, epitaxial growth of single layer hexagonal boron nitride on Pt(111)](<https://www.sota2.com/research/paper/68fa3f061e209131ce8ea525>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-25T02:11:27.063Z

Authors: Adrian Hemmi, Huanyao Cun, Steven Brems, Cedric Huyghebaert, Thomas Greber

Published: 2021-05-15T12:36:29.000Z

## Abstract

Single layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapour deposition at process temperatures between 1000 and 1300 K is in-situ investigated by photoelectron yield measurements. The growth kinetics is slower at higher temperatures and follows a tanh$^2$ law which better fits for higher temperatures. The crystal-quality of h-BN/Pt(111) is inferred from scanning low energy electron diffraction (x-y LEED). The data indicate a strong dependence of the epitaxy on the growth temperature. The dominant structure is an aligned coincidence lattice with 10 h-BN on 9 Pt(1$\\times$1) unit cells and follows the substrate twinning at the millimeter scale.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/2105.07215>)

[PDF](<https://arxiv.org/pdf/2105.07215.pdf>)