# Kinetics of charge carrier recombination in beta-Ga2O3 crystals

Source: [Kinetics of charge carrier recombination in beta-Ga2O3 crystals](<https://www.sota2.com/research/paper/68fa3c221e209131ce8d847f>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-25T00:58:50.667Z

Authors: T. T. Huynh, L. L. C. Lem, A. Kuramata, M. R. Phillips, C. Ton-That

Published: 2020-05-28T02:38:25.000Z

## Abstract

Cathodoluminescence spectra were measured to determine the characteristics of luminescence bands and carrier dynamics in beta-Ga2O3 bulk single crystals. The CL emission was found to be dominated by a broad UV emission peaked at 3.40 eV, which exhibits strong quenching with increasing temperature; however, its spectral shape and energy position remain virtually unchanged. We observed a super-linear increase of CL intensity with excitation density; this kinetics of carrier recombination can be explained in terms of carrier trapping and charge transfer at Fe impurity centres. The temperature-dependent properties of this UV band are consistent with weakly bound electrons in self-trapped excitons with an activation energy of 48 +/- 10 meV. In addition to the self-trapped exciton emission, a blue luminescence (BL) band is shown to be related to a donor-like defect, which increases significantly in concentration after hydrogen plasma annealing. The point defect responsible for the BL, likely an oxygen vacancy, is strongly coupled to the lattice exhibiting a Huang-Rhys factor of ~ 7.3.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/2005.13747>)

[PDF](<https://arxiv.org/pdf/2005.13747.pdf>)