# Metal-insulator transition in three-dimensional semiconductors

Source: [Metal-insulator transition in three-dimensional semiconductors](<https://www.sota2.com/research/paper/68fa3ada1e209131ce8ce23a>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-27T03:59:29.548Z

Authors: K. Ziegler

Published: 2013-03-10T18:51:57.000Z

## Abstract

We use a random gap model to describe a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry breaking results in metallic behavior, whereas the insulating regime is characterized by the absence of spontaneous symmetry breaking. The transition is continuous for the average conductivity with critical exponent equal to 1. Away from the critical point the exponent is roughly 0.6, which may explain experimental observations of a crossover of the exponent from 1 to 0.5 by going away from the critical point.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1303.2359>)

[PDF](<https://arxiv.org/pdf/1303.2359.pdf>)