# Muon probes of temperature-dependent charge carrier kinetics in semiconductors

Source: [Muon probes of temperature-dependent charge carrier kinetics in semiconductors](<https://www.sota2.com/research/paper/68fa3ab81e209131ce8cce15>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-27T03:58:29.621Z

Authors: K. Yokoyama, J. S. Lord, P. W. Mengyan, M. R. Goeks, R. L. Lichti

Published: 2019-06-18T09:35:44.000Z

## Abstract

We have applied the photoexcited muon spin spectroscopy technique (photo-$\\mu$SR) to intrinsic germanium with the goal of developing a new method for characterizing excess carrier kinetics in a wide range of semiconductors. Muon spin relaxation rates can be a unique measure of excess carrier density and utilized to investigate carrier dynamics. The obtained carrier lifetime spectrum can be modeled with a simple diffusion equation to determine bulk recombination lifetime and carrier mobility. Temperature dependent studies of these parameters can reveal the recombination and diffusion mechanism.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1906.07464>)

[PDF](<https://arxiv.org/pdf/1906.07464.pdf>)