# High-field mobility in graphene on substrate with a proper inclusion of the Pauli exclusion principle Source: [High-field mobility in graphene on substrate with a proper inclusion of the Pauli exclusion principle]() Collection index: [llms.txt]() Data updated: 2025-10-24T23:42:25.801Z Authors: Marco Coco, Armando Majorana, Giovanni Nastasi, Vittorio Romano Published: 2017-10-17T08:49:40.000Z ## Abstract The aim of this work is to simulate the charge transport in a monolayer graphene on different substrates. This requires the inclusion of the scatterings of the charge carriers with the impurities and the phonons of the substrate, besides the interaction mechanisms already present in the graphene layer. As physical model, the semiclassical Boltzmann equation is assumed and the results are based on Direct Simulation Monte Carlo (DSMC). A crucial point is the correct inclusion of the Pauli Exclusion Principle (PEP). Two different substrates are investigated: SiO$\_2$ and hexagonal boron nitride (h-BN). In the adopted model for the charge-impurities scattering, a crucial parameter is the distance $d$ between the graphene layer and the impurities of the substrate. Usually $d$ is considered constant. Here we assume that $d$ is a random variable in order to take into account the roughness of the substrate and the randomness of the location of the impurities. We confirm, where only the low-field mobility has been investigated, that h-BN is one of the most promising substrate also for the high-field mobility on account of the reduced degradation of the velocity due to the remote impurities. ## Recorded benchmark results A research result applies to its stated dataset, split, metric and evaluation configuration. Compare like-for-like settings, preserve the metric's unit and direction, and distinguish paper-reported results from independent reproduction. The best result recorded here is not a claim of exhaustive, current global coverage. ## Original sources and implementation [Original paper]() [PDF]()