# Thin interface limit for phase-field models of solidification with local mobility correction

Source: [Thin interface limit for phase-field models of solidification with local mobility correction](<https://www.sota2.com/research/paper/68fa39ae1e209131ce8c4a6a>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-27T03:56:30.603Z

Authors: Stephan Hubig, Raphael Schiedung, Ingo Steinbach

Published: 2019-05-08T08:57:06.000Z

## Abstract

A new approach is developed to derive an analytical form for mobility corrections in phase-field models for pure material solidification. Similar to the thin interface limit approach (Karma and Rappel, 1996) it seeks to remove systematic errors in the kinetics of phase-field models that arise due to the diffusivity of the interface. The new approach harnesses local information within the diffuse interface instead of an expansion within the interface peclet number $p\_e=\\eta/\\delta$, the ratio of diffuse interface thickness to diffusion length. Therefore it has no need for an approximation of $p\_e$ being small. This results in a broader range of applicability of the approach for higher $p\_e$.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1905.02965>)

[PDF](<https://arxiv.org/pdf/1905.02965.pdf>)