# Design of materials properties and device performance in memristive systems Source: [Design of materials properties and device performance in memristive systems]() Collection index: [llms.txt]() Data updated: 2025-10-24T23:20:52.714Z Authors: Michael L\\"ubben, Felix C\\"uppers, Johannes Mohr, Moritz von Witzleben, Uwe Breuer, Rainer Waser, Christian Neumann, Ilia Valov Published: 2019-02-05T12:46:27.000Z ## Abstract Future development of the modern nanoelectronics and its flagships internet of things and artificial intelligence as well as many related applications is largely associated with memristive elements. This technology offers a broad spectrum of functionalities, however, it follows predominantly a phenomenological approach and crucial challenge/limit for further development remains variability and lack of fundamental materials' design strategy. Here we demonstrate the vital importance of materials' purity for determining memristors' functionalities, showing that part per million foreign elements significantly change the performance. By appropriate choice of chemistry and amount of doping material we can selectively enhance desired operation mode. We highlight how dopant dependent structure and charge/potential distribution in the space charge layers and the cell capacitance determine the device kinetics and functions. We evidence for first time experimentally the relation between materials properties and switching/neuromorphic performance, thus providing rules and directions for a rational design of memristive devices. ## Recorded benchmark results A research result applies to its stated dataset, split, metric and evaluation configuration. Compare like-for-like settings, preserve the metric's unit and direction, and distinguish paper-reported results from independent reproduction. The best result recorded here is not a claim of exhaustive, current global coverage. ## Original sources and implementation [Original paper]() [PDF]()