# Structural investigation of uniform ensembles of self-catalyzed GaAs nanowires fabricated by a lithography-free technique

Source: [Structural investigation of uniform ensembles of self-catalyzed GaAs nanowires fabricated by a lithography-free technique](<https://www.sota2.com/research/paper/68fa35711e209131ce8a1c47>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T21:16:21.842Z

Authors: Eero Koivusalo, Teemu Hakkarainen, Mircea Guina

Published: 2017-01-16T12:35:39.000Z

## Abstract

Structural analysis of self-catalyzed GaAs nanowires (NWs) grown on lithography-free oxide patterns is described with insight on their growth kinetics. Statistical analysis of templates and NWs in different phases of the growth reveals extremely high dimensional uniformity due to a combination of uniform nucleation sites, lack of secondary nucleation of NWs, and self-regulated growth under the effect of nucleation antibunching. Consequently, we observed the first evidence of sub-Poissonian GaAs NW length distributions. The high phase purity of the NWs is demonstrated using complementary transmission electron microscopy (TEM) and high-resolution x-ray diffractometry (HR-XRD). It is also shown that, while NWs are to large extent defect-free with up to 2 um long twin-free zincblende segments, low temperature micro-photoluminescence spectroscopy reveals that the proportion of structurally disordered sections can be detected from their spectral properties.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1701.04264>)

[PDF](<https://arxiv.org/pdf/1701.04264.pdf>)