# The role of stress and diffusion in structure formation in semiconductors

Source: [The role of stress and diffusion in structure formation in semiconductors](<https://www.sota2.com/research/paper/68fa343b1e209131ce89709b>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-27T03:42:48.811Z

Authors: Mathieu Bouville

Published: 2005-09-21T01:31:56.000Z

## Abstract

This dissertation addresses two aspects of the theory and simulation of stress-diffusion coupling in semiconductors. The first part is a study of the role of kinetics in the formation of pits in stressed thin films. The second part describes how atomic-scale calculations can be used to extract the thermodynamic and elastic properties of point-defects. For both aspects, there exists an interaction between phenomena at the atomic and macroscopic scales and the formation of both point-defects and surface features depends on the stress state of the system.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/cond-mat/0509532>)

[PDF](<https://arxiv.org/pdf/cond-mat/0509532.pdf>)