# Local environment of Nitrogen in GaN{y}As{1-y} epilayers on GaAs (001) studied using X-ray absorption near edge spectroscopy

Source: [Local environment of Nitrogen in GaN{y}As{1-y} epilayers on GaAs (001) studied using X-ray absorption near edge spectroscopy](<https://www.sota2.com/research/paper/68fa33f41e209131ce8946c6>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T20:22:04.911Z

Authors: J. A. Gupta, M. W. C. Dharma-wardana, A. J\\"urgensen, E.D. Crozier, J.J. Rehr, M.Prange

Published: 2004-10-20T19:37:54.000Z

## Abstract

X-ray absorption near-edge spectroscopy (XANES) is used to study the N environment in bulk GaN and in GaN{y}As{1-y} epilayers on GaAs (001), for y \\~5%. Density-functional optimized structures were used to predict XANES via multiple-scattering theory. We obtain striking agreement for pure GaN. An alloy model with nitrogen pairs on Ga accurately predicts the threshold energy, the width of the XANES \`\`white line'', and features above threshold, for the given X-ray polarization. The presence of N-pairs may point to a role for molecular N\_2 in epitaxial growth kinetics.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/cond-mat/0410514>)

[PDF](<https://arxiv.org/pdf/cond-mat/0410514.pdf>)