# Nanosecond light induced, thermally tunable transient dual absorption bands in a-Ge5As30Se65 thin film

Source: [Nanosecond light induced, thermally tunable transient dual absorption bands in a-Ge5As30Se65 thin film](<https://www.sota2.com/research/paper/68fa32441e209131ce88661c>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-28T13:53:45.363Z

Authors: Pritam Khan, Tarun Saxena, K. V. Adarsh

Published: 2014-05-05T13:15:59.000Z

## Abstract

In this article, we report the first observation of nanosecond laser induced transient dual absorption bands, one in the bandgap (TA1) and another in the sub-bandgap (TA2) regions of a-Ge5As30Se65 thin films. Strikingly, these bands are thermally tunable and exhibit a unique contrasting characteristic: the magnitude of TA1 decreases while that of TA2 increases with increasing temperature. Further, the decay kinetics of these bands is strongly influenced by the temperature, which signifies a strong temperature-dependent exciton recombination mechanism. The induced absorption shows quadratic and the decay time constant shows linear dependence on the laser beam fluence.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1405.0890>)

[PDF](<https://arxiv.org/pdf/1405.0890.pdf>)