# High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics Source: [High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics]() Collection index: [llms.txt]() Data updated: 2025-10-24T18:52:04.140Z Authors: S. Valdueza-Felip, E. Bellet-Amalric, A. N\\'u\\~nez-Cascajero, Y. Wang, M.-P. Chauvat, P. Ruterana, S. Pouget, K. Lorenz, E. Alves, E. Monroy Published: 2014-10-21T13:53:19.000Z ## Abstract We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For In mole fractions x = 0.13-0.48, best structural and morphological quality is obtained under In excess conditions, at In accumulation limit, and at a growth temperature where InGaN decomposition is active. Under such conditions, in situ and ex situ analysis of the evolution of the crystalline structure with the growth thickness points to an onset of misfit relaxation after the growth of 40 nm, and a gradual relaxation during more than 200 nm which results in an inhomogeneous strain distribution along the growth axis. This process is associated with a compositional pulling effect, i.e. indium incorporation is partially inhibited in presence of compressive strain, resulting in a compositional gradient with increasing In mole fraction towards the surface. ## Recorded benchmark results A research result applies to its stated dataset, split, metric and evaluation configuration. Compare like-for-like settings, preserve the metric's unit and direction, and distinguish paper-reported results from independent reproduction. The best result recorded here is not a claim of exhaustive, current global coverage. ## Original sources and implementation [Original paper]() [PDF]()