# Large photoresponse of Cu:TCNQ nanowire arrays formed as aligned nanobridges

Source: [Large photoresponse of Cu:TCNQ nanowire arrays formed as aligned nanobridges](<https://www.sota2.com/research/paper/68fa30971e209131ce8767f2>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T18:17:09.891Z

Authors: Rabaya Basori, K. Das, Prashant Kumar, K. S. Narayan, A. K. Raychaudhuri

Published: 2012-10-22T06:08:20.000Z

## Abstract

We report for the first time a large photoresponse in an array of charge transfer complex Cu:TCNQ nanowires (average diameter 30 nm) fabricated as a nanobridge device. The device shows highest photoresponse for excitation with 405 nm light which matches with its absorption peak. The current gain at zero bias can reach ~104 with an illumination power density of 2x106 W/m2. The zero bias responsivity is ~0.3 mA/W which increases on applying bias reaching 1.0 A/W or more for a bias of 2.0 Volt. Dark and illuminated I-V data are analyzed by two back-to-back Schottky diodes model, which shows the predominant photocurrent in the device arising from the photoconductive response of the nanowires.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1210.5809>)

[PDF](<https://arxiv.org/pdf/1210.5809.pdf>)