# Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon

Source: [Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon](<https://www.sota2.com/research/paper/68fa30861e209131ce876556>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-27T03:32:53.359Z

Authors: Y. Ando, S. Yamada, K. Kasahara, K. Sawano, M. Miyao, K. Hamaya

Published: 2012-10-02T00:57:01.000Z

## Abstract

We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. Clear reduction in the spin accumulation signals can be seen by introducing the domain walls in the CoFe contact, caused by the lateral spin transport in the Si channel. The domain walls in the CoFe contact largely affect the spin lifetime and bias-current dependence of the spin signals. These results indicate that the estimation of the spin related properties without considering the domain structure in the contact causes non-negligible errors in the three-terminal Hanle-effect measurements.

## Recorded benchmark results

A research result applies to its stated dataset, split, metric and evaluation configuration. Compare like-for-like settings, preserve the metric's unit and direction, and distinguish paper-reported results from independent reproduction. The best result recorded here is not a claim of exhaustive, current global coverage.

## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1210.0624>)

[PDF](<https://arxiv.org/pdf/1210.0624.pdf>)