# Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

Source: [Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping](<https://www.sota2.com/research/paper/68fa2f801e209131ce86cc6f>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T17:37:05.208Z

Authors: Bilal Gokce, David E. Aspnes, Gerald Lucovsky, Kenan Gundogdu

Published: 2010-11-19T10:28:47.000Z

## Abstract

It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time second-harmonic-generation data on the oxidation of H-terminated (111)Si that reveal that high concentrations of electrons increase the chemical reactivity of the outer-layer Si-Si back bonds relative to the Si-H up bonds. However, the thicknesses of the natural oxides of all samples stabilize near 1 nm at room temperature, regardless of the chemical kinetics of the different bonds.

## Recorded benchmark results

A research result applies to its stated dataset, split, metric and evaluation configuration. Compare like-for-like settings, preserve the metric's unit and direction, and distinguish paper-reported results from independent reproduction. The best result recorded here is not a claim of exhaustive, current global coverage.

## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1011.4386>)

[PDF](<https://arxiv.org/pdf/1011.4386.pdf>)