# Electrical injection and detection of spin-polarized electrons in silicon through an Fe\_3Si/Si Schottky tunnel barrier

Source: [Electrical injection and detection of spin-polarized electrons in silicon through an Fe\_3Si/Si Schottky tunnel barrier](<https://www.sota2.com/research/paper/68fa2ef41e209131ce867e8f>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-28T13:53:32.328Z

Authors: Y. Ando, K. Hamaya, K. Kasahara, Y. Kishi, K. Ueda, K. Sawano, T. Sadoh, M. Miyao

Published: 2009-04-20T09:21:54.000Z

## Abstract

We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe\_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe\_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe\_3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe\_3Si/Si contacts, we detect nonlocal output signals which originate from the spin accumulation in a Si channel at low temperatures.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/0904.2980>)

[PDF](<https://arxiv.org/pdf/0904.2980.pdf>)