# Transient processes in disordered semiconductor structures under dispersive transport conditions: Fractional calculus approach

Source: [Transient processes in disordered semiconductor structures under dispersive transport conditions: Fractional calculus approach](<https://www.sota2.com/research/paper/68fa2cb11e209131ce852232>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T15:29:02.665Z

Authors: Renat T. Sibatov, Vladimir V. Uchaikin

Published: 2013-10-01T18:14:10.000Z

## Abstract

We continue to develop a new approach to description of charge kinetics in disordered semiconductors. It is based on fractional diffusion equations. This article is devoted to transient processes in structures under dispersive transport conditions. We demonstrate that this approach allows us (i) to take into account energetic and topological types of disorder in common, (ii) to consider transport in samples with spatial distributions of localized states, and (iii) to describe transport in non-homogeneous materials with distributed dispersion parameter. Using fractional approach provides some specifications in interpretation of time-of-flight experiments in disordered semiconductors.

## Recorded benchmark results

A research result applies to its stated dataset, split, metric and evaluation configuration. Compare like-for-like settings, preserve the metric's unit and direction, and distinguish paper-reported results from independent reproduction. The best result recorded here is not a claim of exhaustive, current global coverage.

## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1310.0415>)

[PDF](<https://arxiv.org/pdf/1310.0415.pdf>)