# Efficiently Engineered Room Temperature Single Photons in Silicon Carbide

Source: [Efficiently Engineered Room Temperature Single Photons in Silicon Carbide](<https://www.sota2.com/research/paper/68fa2bad1e209131ce84921b>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T14:21:49.091Z

Authors: S. Castelletto, B. C. Johnson, N. Stavrias, T. Umeda, T. Ohshima

Published: 2012-10-18T08:02:49.000Z

## Abstract

We report the first observation of stable single photon sources in silicon carbide (SiC). These sources are extremely bright and operate at room temperature demonstrating that SiC is a viable material in which to realize various quantum information, computation and photonic applications. The maximum single photon count rate detected is 700k counts/s with an inferred quantum efficiency around 70%. The single photon sources are due to intrinsic deep level defects constituted of carbon antisite-vacancy pairs. These are shown to be formed controllably by electron irradiation. The variability of the temporal kinetics of these single defects is investigated in detail.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1210.5047>)

[PDF](<https://arxiv.org/pdf/1210.5047.pdf>)