# Understanding of the Retarded Oxidation Effects in Silicon Nanostructures

Source: [Understanding of the Retarded Oxidation Effects in Silicon Nanostructures](<https://www.sota2.com/research/paper/68fa2b611e209131ce846277>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T14:08:34.664Z

Authors: C. Krzeminski, X.-L. Han, G. Larrieu

Published: 2012-03-13T13:40:15.000Z

## Abstract

In-depth understanding of the retarded oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings and nanowires exhibits an extremely different and complex behavior. Such effects have been investigated by the modeling of the mechanical stress generated during the oxidation process explaining the retarded regime. The model describes the oxidation kinetics of silicon nanowires down to a few nanometers while predicting reasonable and physical stress levels at the Si/SiO$\_{2}$ interface by correctly taking into account the relaxation effects in silicon oxide through plastic flow.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1203.2803>)

[PDF](<https://arxiv.org/pdf/1203.2803.pdf>)