# Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces

Source: [Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces](<https://www.sota2.com/research/paper/68fa2b611e209131ce846113>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T14:08:34.664Z

Authors: Y. Ando, S. Yamada, K. Kasahara, K. Masaki, K. Sawano, M. Miyao, K. Hamaya

Published: 2012-07-05T02:18:08.000Z

## Abstract

We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. By controlling the measurement temperature, we can clearly observe marked changes in the spin-accumulation signals at low temperatures, at which the electron transport across the interface changes from the direct tunneling to the two-step one via the localized states. We discuss in detail the difference in the spin accumulation between in the Si channel and in the localized states.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1207.1154>)

[PDF](<https://arxiv.org/pdf/1207.1154.pdf>)