# Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts

Source: [Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts](<https://www.sota2.com/research/paper/68fa2b301e209131ce8444d4>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T14:01:20.789Z

Authors: K. Kasahara, Y. Baba, K. Yamane, Y. Ando, S. Yamada, Y. Hoshi, K. Sawano, M. Miyao, K. Hamaya

Published: 2011-05-05T08:33:43.000Z

## Abstract

Using high-quality Fe$\_{3}$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created in the $n$-Ge channel. The estimated spin lifetime in $n$-Ge at 50 K is one order of magnitude shorter than those in $n$-Si reported recently. The magnitude of the spin signals cannot be explained by the commonly used spin diffusion model. We discuss a possible origin of the difference between experimental data and theoretical values.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1105.1012>)

[PDF](<https://arxiv.org/pdf/1105.1012.pdf>)