# Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel

Source: [Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel](<https://www.sota2.com/research/paper/68fa2b031e209131ce842c71>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-28T13:53:12.282Z

Authors: Y. Ando, K. Kasahara, S. Yamada, Y. Maeda, K. Masaki, Y. Hoshi, K. Sawano, M. Miyao, K. Hamaya

Published: 2012-01-28T12:05:53.000Z

## Abstract

We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin signals can be enhanced despite the rise of temperature. For the interpretation of the temperature-dependent spin signals, it is important to consider the sensitivity of the spin detection at the Schottky-tunnel-barrier contact in addition to the spin diffusion in Si.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1201.5950>)

[PDF](<https://arxiv.org/pdf/1201.5950.pdf>)