# Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces

Source: [Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces](<https://www.sota2.com/research/paper/68fa2b021e209131ce842c25>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T13:55:07.338Z

Authors: K. Kasahara, S. Yamada, K. Sawano, M. Miyao, K. Hamaya

Published: 2011-08-18T07:38:08.000Z

## Abstract

The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the Fe$\_{3}$Si/Ge(111) heterostructure developed originally, we can explore electrical transport properties through atomically matched metal/Ge junctions. Unlike the conventional metal/$p$-Ge junctions reported so far, we clearly observe rectifying current-voltage characteristics with a measurable Schottky barrier height, depending on the contact area of the Fe$\_{3}$Si/Ge(111) junction. These results indicate that one should distinguish between intrinsic and extrinsic mechanisms for discussing the formation of the Schottky barrier at metal/Ge interfaces. This study will be developed for understanding FLP for almost all the metal/semiconductor interfaces.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1108.3669>)

[PDF](<https://arxiv.org/pdf/1108.3669.pdf>)