# Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

Source: [Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact](<https://www.sota2.com/research/paper/68fa2b021e209131ce842c15>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T13:55:07.338Z

Authors: Y. Ando, K. Kasahara, K. Yamane, Y. Baba, Y. Maeda, Y. Hoshi, K. Sawano, M. Miyao, K. Hamaya

Published: 2011-04-14T03:34:14.000Z

## Abstract

We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability of the forward-biased contact is higher than that of the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1104.2658>)

[PDF](<https://arxiv.org/pdf/1104.2658.pdf>)