# Dopant-enhanced solid phase epitaxy in buried amorphous silicon layers

Source: [Dopant-enhanced solid phase epitaxy in buried amorphous silicon layers](<https://www.sota2.com/research/paper/68fa29771e209131ce834743>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T12:55:20.375Z

Authors: B. C. Johnson, J. C. McCallum

Published: 2010-07-30T05:49:30.000Z

## Abstract

The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are stud- ied in buried amorphous Si (a-Si) layers in which SPE is not retarded by H. As, P, B and Al profiles were formed by multiple energy ion implantation over a con- centration range of 1 - 30 x 1019 /cm3. Anneals were performed in air over the temperature range 460-660 oC and the rate of interface motion was monitored us- ing time resolved reflectivity. The dopant-enhanced SPE rates were modeled with the generalized Fermi level shifting model using degenerate semiconductor statis- tics. The effect of band bending between the crystalline and amorphous sides of the interface is also considered.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1007.5372>)

[PDF](<https://arxiv.org/pdf/1007.5372.pdf>)