# Intrinsic and dopant enhanced solid phase epitaxy in amorphous germanium

Source: [Intrinsic and dopant enhanced solid phase epitaxy in amorphous germanium](<https://www.sota2.com/research/paper/68fa29771e209131ce8346fa>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T12:55:20.375Z

Authors: B. C. Johnson, P. Gortmaker, J. C. McCallum

Published: 2010-07-29T13:16:32.000Z

## Abstract

The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) is stud- ied in amorphous germanium (a-Ge) layers formed by ion implantation on \<100\> Ge substrates. The SPE rates were measured with a time-resolved reflectivity (TRR) system between 300 and 540 degC and found to have an activation energy of (2.15 +/- 0.04) eV. To interpret the TRR measurements the refractive indices of the a-Ge layers were measured at the two wavelengths used, 1.152 and 1.532 {\\mu}m. For the first time, SPE rate measurements on thick a-Ge layers (\>3 {\\mu}m) have also been performed to distinguish between bulk and near-surface SPE growth rate behavior. Possible effects of explosive crystallization on thick a-Ge layers are considered. When H is present in a-Ge it is found to have a considerably greater retarding affect on the SPE rate than for similar concentrations in a-Si layers. Hydrogen is found to reduce the pre-exponential SPE velocity factor but not the activation energy of SPE. However, the extent of H indiffusion into a-Ge surface layers during SPE is about one order of magnitude less that that observed for a-Si layers. This is thought to be due to the lack of a stable surface oxide on a-Ge. Dopant enhanced kinetics were measured in a-Ge layers containing uniform concentration profiles of implanted As or Al spanning the concentration regime 1-10 x1019 /cm-3. Dopant compensation effects are also observed in a-Ge layers containing equal concentrations of As and Al, where the SPE rate is similar to the intrinsic rate. Various SPE models are considered in light of these data.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1007.5209>)

[PDF](<https://arxiv.org/pdf/1007.5209.pdf>)