# Hot-Carrier Model for an Anomalous Exponent of Photoconduction

Source: [Hot-Carrier Model for an Anomalous Exponent of Photoconduction](<https://www.sota2.com/research/paper/68fa29601e209131ce83379f>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T12:51:10.894Z

Authors: Michael Wilkinson

Published: 2010-06-12T21:45:38.000Z

## Abstract

Experiments often show that the photoconductance $\\sigma$ of a semiconductor system and the light intensity $I$ are related by $\\sigma\\sim I^\\gamma$. Conventional theories give a satisfactory explanation for $\\gamma=1$ or $\\gamma=1/2$, but anamalous exponents close to $\\gamma=3/4$ are often observed. This paper argues that there is a universal anomalous regime for which $\\gamma=3/4$ (or $\\gamma=2/3$ in two-dimensional samples), resulting from the kinetics of electron-hole recombination being controlled by Coulombic attraction. Because the local electric fields are extremely high, the theory appeals to the 'hot-carrier' model for transport in semiconductors.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/1006.2496>)

[PDF](<https://arxiv.org/pdf/1006.2496.pdf>)