# Underetching from simple stochastic etching kinetics

Source: [Underetching from simple stochastic etching kinetics](<https://www.sota2.com/research/paper/68fa29151e209131ce830f4d>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T12:40:57.554Z

Authors: Jens Christian Claussen, J\\"urgen Carstensen

Published: 2004-10-21T13:51:36.000Z

## Abstract

The morphological richness of electrochemical semiconductor etching is not sufficiently counterparted yet by theoretical modeling. This paper investigates a minimal version of the Current-Burst model with Aging of F\\"oll and Carstensen and demonstrates for a restricted geometry that the Aging concept is essential for underetching, or cavity generation. If the influence of Aging is neglected, the dynamics reduces to a Random Etching Model similar to the Random Deposition model. This computer {\\sl gedanken experiment} demonstrates that the stochastic dynamics with ageing-dependent kinetic reaction probabilities accounts for the different etching morphologies compared to those obtained in surface roughening and related systems.

## Recorded benchmark results

A research result applies to its stated dataset, split, metric and evaluation configuration. Compare like-for-like settings, preserve the metric's unit and direction, and distinguish paper-reported results from independent reproduction. The best result recorded here is not a claim of exhaustive, current global coverage.

## Original sources and implementation

[Original paper](<https://arxiv.org/abs/cond-mat/0410541>)

[PDF](<https://arxiv.org/pdf/cond-mat/0410541.pdf>)