# Transition from anomalous kinetics towards Fickian diffusion for Si dissolution into amorphous Ge

Source: [Transition from anomalous kinetics towards Fickian diffusion for Si dissolution into amorphous Ge](<https://www.sota2.com/research/paper/68fa28a72c2a3760193c9496>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-28T13:52:55.483Z

Authors: Z.Balogh, Z.Erdelyi, D. L. Beke, G.A. Langer, A. Csik, Hans-Gerd Boyen, Ulf Wiedwald, P. Ziemann, A.Portavoce, Ch. Girardeaux

Published: 2009-02-12T07:38:10.000Z

## Abstract

Over the last years several experimental and theoretical studies of diffusion kinetics on the nanoscale have shown that the time evolution differs from the classical Fickian law (kc=0.5). However, all work was based on crystalline samples or models, so far. In this letter, we report on the diffusion kinetics of a thin amorphous-Si layer into amorphous-Ge to account for the rising importance of amorphous materials in nanodevices. Employing surface sensitive technics, the initial kc was found at 0.7+-0.1. Moreover, after some monolayers of Si dissolved into the Ge, kc changes to the generally expected classical Fickian law with kc=0.5.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/0902.2046>)

[PDF](<https://arxiv.org/pdf/0902.2046.pdf>)