# Evolution of self-assembled InAs/Gas(001) quantum dots grown by growth-interrupted molecular beam epitaxy

Source: [Evolution of self-assembled InAs/Gas(001) quantum dots grown by growth-interrupted molecular beam epitaxy](<https://www.sota2.com/research/paper/68fa285c2c2a3760193c7c40>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-28T13:52:52.313Z

Authors: A. Balzarotti

Published: 2008-07-18T10:13:27.000Z

## Abstract

Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is quantitatively described by a rate-equation kinetic model. The volume density of small Q3D QDs decreases exponentially with time during the interruption, while the single-dot mean volume of the large QDs increases by Ostwald ripening. The kinetics of growth involves conversion of quasi-3D to 3D QDs at a rate determined by superstress and participation of the wetting layer adatoms. The data analysis excludes that quasi-3D QDs are extrinsic surface features due to inefficient cooling after growth.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/0807.2937>)

[PDF](<https://arxiv.org/pdf/0807.2937.pdf>)