# Growth mode control of the free carrier density in SrTiO3-d films

Source: [Growth mode control of the free carrier density in SrTiO3-d films](<https://www.sota2.com/research/paper/68fa274f2c2a3760193c1d58>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T11:55:51.777Z

Authors: Akira Ohtomo, Harold Y. Hwang

Published: 2006-04-05T05:13:18.000Z

## Abstract

We have studied the growth dynamics and electronic properties of SrTiO3-d homoepitaxial films by pulsed laser deposition. We find the two dominant factors determining the growth mode are the kinetics of surface crystallization and oxidation. When matched, persistent two-dimensional layer-by-layer growth can be obtained for hundreds of unit cells. By tuning these kinetic factors, oxygen vacancies can be frozen in the film, allowing controlled, systematic doping across a metal-insulator transition. Metallic films can be grown, exhibiting Hall mobilities as high as 25,000 cm2/Vs.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/cond-mat/0604117>)

[PDF](<https://arxiv.org/pdf/cond-mat/0604117.pdf>)