# Dispersive diffusion controlled distance dependent recombination in amorphous semiconductors

Source: [Dispersive diffusion controlled distance dependent recombination in amorphous semiconductors](<https://www.sota2.com/research/paper/68fa27032c2a3760193bf6cb>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-27T03:06:26.664Z

Authors: Kazuhiko Seki, Mariusz Wojcik, M. Tachiya

Published: 2005-11-29T05:15:38.000Z

## Abstract

The photoluminescence in amorphous semiconductors decays according to power law $t^{-delta}$ at long times. The photoluminescence is controlled by dispersive transport of electrons. The latter is usually characterized by the power $alpha$ of the transient current observed in the time-of-flight experiments. Geminate recombination occurs by radiative tunneling which has a distance dependence. In this paper, we formulate ways to calculate reaction rates and survival probabilities in the case carriers execute dispersive diffusion with long-range reactivity. The method is applied to obtain tunneling recombination rates under dispersive diffusion. The theoretical condition of observing the relation $delta = alpha/2 + 1$ is obtained and theoretical recombination rates are compared to the kinetics of observed photoluminescence decay in the whole time range measured.

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/cond-mat/0511686>)

[PDF](<https://arxiv.org/pdf/cond-mat/0511686.pdf>)