# Quantum wells with atomically smooth interfaces

Source: [Quantum wells with atomically smooth interfaces](<https://www.sota2.com/research/paper/68fa25b72c2a3760193b324d>)

Collection index: [llms.txt](<https://www.sota2.com/research/llms.txt>)

Data updated: 2025-10-24T10:55:29.056Z

Authors: Masahiro Yoshita, Hidefumi Akiyama, Loren N. Pfeiffer, Ken W. West

Published: 2002-05-09T18:07:56.000Z

## Abstract

By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt-anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs hetero-interfaces without atomic roughness. Micro-photoluminescence imaging of this quantum well indeed shows spatially uniform and spectrally sharp emission over areas of several tens of $\\mu$m in extent. By adding a fractional GaAs monolayer to our quantum well we are able to study the details of the atomic step-edge kinetics responsible for flat interface formation.

## Recorded benchmark results

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## Original sources and implementation

[Original paper](<https://arxiv.org/abs/cond-mat/0205183>)

[PDF](<https://arxiv.org/pdf/cond-mat/0205183.pdf>)